Hafnium Oxide can be used as high temperature resistant material
A Hafnium Oxide dielectric film was prepared. It includes the following steps: weighing the soluble hafnium salt, measuring the solvent, configuring a Hafnium Oxide precursor solution with a concentration of 0.01-0.5 mol/L, and forming a clear and transparent Hafnium Oxide precursor after 0.1-3 hours of magnetic stirring and ultrasonic dispersion Solution
2022-09-23
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