Information

A Hafnium Oxide dielectric film was prepared. It includes the following steps: weighing the soluble hafnium salt, measuring the solvent, configuring a Hafnium Oxide precursor solution with a concentration of 0.01-0.5 mol/L, and forming a clear and transparent Hafnium Oxide precursor after 0.1-3 hours of magnetic stirring and ultrasonic dispersion Solution; preparation of Hafnium Oxide film: Coat the Hafnium Oxide precursor solution on the cleaned substrate to form a Hafnium Oxide precursor film, preheat at 50-150-℃, and then pass a light wave with a certain power, time and temperature Annealing, according to the thickness requirement of the Hafnium Oxide thin film, the precursor Hafnium Oxide solution can be coated for many times and annealed to obtain the Hafnium Oxide dielectric thin film.

The obtained Hafnium Oxide thin film has high dielectric properties and has important application prospects in microelectronic fields such as transistors and capacitors. The process of the present invention can avoid the common high temperature solution process, long process cycle or expensive equipment, etc., the cost is low, and it is suitable for industrialized large-scale production.